過共晶Al-Si-溶湯の溶存P量と初結晶Siの改良化

過共晶Al-Si-溶湯の溶存P量と初結晶Siの改良化講演概要・記念講演[M]200105過共晶Al-Si-溶湯の溶存P量と初結晶Siの改良化Dissolved Phosphorus Content in Hypereutectic Al-Si Melt and Primary Silicon RefinementO.Thaundape(ChulalongkornUniversity)、I.Diewwani(ChulalongkornUniversity)、T.Umeda〔梅田高照〕(ChulalongkornUniversity)過共晶Al-Si-溶湯の溶存P量と初結晶Siの改良化 ; Dissolved Phosphorus Content in Hypereutectic Al-Si Melt and Primary Silicon Refinement138-0084講演概要・記念講演[M]n06864

分類講演概要・記念講演[M]
DOI
掲載年月200105
論文名過共晶Al-Si-溶湯の溶存P量と初結晶Siの改良化
論文名(英)Dissolved Phosphorus Content in Hypereutectic Al-Si Melt and Primary Silicon Refinement
研究者O.Thaundape(ChulalongkornUniversity)、I.Diewwani(ChulalongkornUniversity)、T.Umeda〔梅田高照〕(ChulalongkornUniversity)
キーワード過共晶Al-Si-溶湯の溶存P量と初結晶Siの改良化 ; Dissolved Phosphorus Content in Hypereutectic Al-Si Melt and Primary Silicon Refinement
掲載ページ138-0084
IDn06864